CBR1-D020S_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT1 AMP SILICON BRIDGE RECTIFIER

CBR1-D020S SERIES
SURFACE MOUNT
1 AMP
SILICON BRIDGE RECTIFIER
SMDIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-D020S series
types are silicon full wave bridge rectifiers mounted in a
durable epoxy surface mount molded case, utilizing glass
passivated chips.
NOTE: Also available in Fast Recovery, please
contact factory for details.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reve
Average Forward Current (TA=50°C)
Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage
Junction Temperature
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
I²t
TJ, Tstg
CBR1-
D020S
200
200
140
CBR1-
D040S
400
400
280
CBR1-
D060S
600
600
420
1.0
50
10
CBR1-
D080S
800
800
560
CBR1-
D100S
1000
1000
700
UNITS
V
V
V
A
A
A²s
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=125°C
VF
IF=1.0A
CJ
VR=4.0V, f=1.0MHz
25
MAX
10
0.5
1.1
UNITS
µA
mA
V
pF
R3 (4-January 2010)