CBCX68_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS

CBCX68 SERIES NPN
CBCX69 SERIES PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCX68 and
CBCX69 series types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for applications requiring high current
capability.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ_JA
25
20
5.0
1.0
2.0
100
200
1.2
-65 to +150
104
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX UNITS
ICBO
VCB=25V
100
nA
ICBO
VCB=25V, TA=150°C
10
µA
IEBO
VEB=5.0V
10
µA
BVCBO
IC=10µA
25
V
BVCEO
IC=10mA
20
V
BVEBO
IE=1.0µA
5.0
V
VCE(SAT) IC=1.0A, IB=100mA
0.5
V
VBE(ON)
VCE=10V, IC=5.0mA
0.6
V
VBE(ON)
VCE=1.0V, IC=1.0A
1.0
V
hFE
VCE=10V, IC=5.0mA
50
hFE
VCE=1.0V, IC=500mA (CBCX68, CBCX69)
85
375
hFE
VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16) 100
250
hFE
VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25) 160
400
hFE
VCE=1.0V, IC=1.0A
60
fT
VCE=5.0V, IC=10mA, f=20MHz
65
MHz
R10 (4-January 2010)