CBCX68 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS

CBCX68
CBCX69
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
SOT-89 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCX68,
CBCX69 types are complementary silicon
transistor manufactured by epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
MAXIMUM RATINGS (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-Peak
Base Current
Base Current Peak
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Temperature
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
Θ_JA
25
20
5.0
1.0
2.0
100
200
1.2
-65 to +150
104
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
fT
VCB=25V
VCB=25V, TA=150°C
VEB=5.0V
IC=10µA
IC=10mA
IE=1.0µA
IC=1.0A, IB=100mA
VCE=10V,IC=5.0mA
VCE=1.0V, IC=1.0A
VCE=10V,IC=500mA
VCE=1.0,IC=500mA
VCE=1.0V, IC=1.0A
VCE=5.0V,IC=10mA, f=20MHz
25
20
5.0
0.6
50
85
60
65
MAX
100
10
0.5
1.0
375
UNITS
nA
µA
µA
V
V
V
V
V
V
MHz
R4 ( 19-December 2001)