CBCP68 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SMALL SIGNAL SILICON TRANSISTORS

CBCP68 NPN
CBCP69 PNP
SURFACE MOUNT
COMPLEMENTARY
SMALL SIGNAL SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68 and
CBCP69 types are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring high current capability.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ_JA
25
20
5.0
1.0
2.0
100
200
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=25V
ICBO
VCB=25V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA
25
BVCEO
IC=10mA
20
BVEBO
IE=1.0µA
5.0
VCE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=10V, IC=5.0mA
0.6
VBE(ON)
VCE=1.0V, IC=1.0A
hFE
VCE=10V, IC=5.0mA
50
hFE
VCE=1.0V, IC=500mA
85
hFE
VCE=1.0V, IC=1.0A
60
fT
VCE=5.0V, IC=10mA, f=20MHz
65
Cob
VCB=5.0V, IE=0, f=450kHz
25
MAX
10
1.0
10
0.5
1.0
375
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
UNITS
µA
mA
µA
V
V
V
V
V
V
MHz
pF
R5 (4-January 2010)