CBAS17_09 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR

CBAS17
SURFACE MOUNT
LOW VOLTAGE
SILICON STABISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAS17 type is
a planar epitaxial silicon switching diode, designed for
low voltage stabilizing applications.
MARKING CODE: A91
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Forward Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
IFRM
PD
TJ, Tstg
Θ_JA
250
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=4.0V
VF
IF=0.1mA
580
665
VF
IF=1.0mA
665
745
VF
IF=5.0mA
725
805
VF
IF=10mA
750
825
VF
IF=100mA
870
920
CT
VR=0, f=1.0MHz
MAX
5.0
680
760
820
840
960
140
UNITS
mA
mW
°C
°C/W
UNITS
µA
mV
mV
mV
mV
mV
pF
R6 (20-November 2009)