C106B2 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS

C106B2
C106D2
C106M2
SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106B2 Series
types are 4.0A, PNPN sensitive gate triggering silicon
controlled rectifiers with voltages ranging from 200V
to 600V. These devices are designed for applications
such as temperature, light and speed control, and
remote warning and triggering applications.
TO-202-2 THYRISTOR CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL C106B2
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=85°C)
IT(RMS)
Peak One Cycle Surge Current, t=8.3ms
ITSM
I²t Value for Fusing
I²t
C106D2
400
4.0
20
1.65
C106M2
600
Peak Gate Power Dissipation (TC=80°C)
Average Gate Power Dissipation (TC=80°C)
Peak Forward Gate Current (TC=80°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGFM
TJ
Tstg
Θ_JC
Θ_JA
0.5
0.1
0.2
-40 to +110
-40 to +150
7.5
80
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C
100
VTM
IT=4.0A
2.2
IGT
VD=6.0V, RL=100Ω
200
IGT
VD=6.0V, RL=100Ω, TJ=–40°C
500
VGT
VD=6.0V, RL=100Ω
0.4
0.8
VGT
VD=6.0V, RL=100Ω, TJ=–40°C
0.5
1.0
IH
VD=12V
3.0
IH
VD=12V, TJ=–40°C
6.0
IH
VD=12V, TJ=110°C
2.0
IL
VD=12V
5.0
IL
VD=12V, TJ=–40°C
7.0
dv/dt
VD=Rated VDRM, RGK=1.0KΩ, TJ=110°C
8.0
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
UNITS
μA
μA
V
μA
μA
V
V
mA
mA
mA
mA
mA
V/μs
R0 (15-February 2011)