C106B Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS

C106B
C106D
C106M
4.0A SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
200 THRU 600 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106B
Series are 4.0A, PNPN sensitive gate triggering
silicon controlled rectifiers with voltages ranging
from 200V to 600V. These devices are designed
for applications such as temperature, light and
speed control, remote warning and triggering
applications.
TO-126 CASE
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=80°C)
Peak Non-Repetitive Surge Current (TJ=110°C)
I²t Value for Fusing (t=8.3ms)
VDRM, VRRM
IT(RMS)
ITSM
I²t
Peak Gate Power (TC=80°C)
Average Gate Power (TC=80°C)
Peak Forward Gate Current (TC=80°C)
Storage Temperature
Junction Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGFM
Tstg
TJ
Θ_JC
Θ_JA
C106B C106D C106M
200
400
600
4.0
20
1.65
0.5
0.1
0.2
-40 to +150
-40 to +110
3.0
75
UNITS
V
A
A
A²s
W
W
A
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM, IRRM
Rated VDRM, VRRM, RGK=1KΩ
IDRM, IRRM
Rated VDRM, VRRM, RGK=1KΩ, TJ=110°C
VTM
IFM=4.0A
IGT
VAK=6.0V, RL=100Ω
IGT
VAK=6.0V, RL=100Ω, TJ= -40°C
VGT
VAK=6.0V, RL=100Ω
0.4
VGT
VAK=6.0V, RL=100Ω, TJ= -40°C
0.5
IH
VD=12V
IH
VD=12V, TJ= -40°C
IH
VD=12V, TJ=110°C
IL
VD=12V
IL
VD=12V, TJ= -40°C
dv/dt
VD= Rated VDRM, RGK=1KΩ, TJ=110°C
TYP MAX
10
100
2.2
200
500
0.8
1.0
3.0
6.0
2.0
5.0
7.0
8.0
UNITS
µA
µA
V
µA
µA
V
V
mA
mA
mA
mA
mA
V/µs
R0 (27-April 2004)