C106A1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER

C106A1 C106D1
C106B1 C106E1
C106C1 C106M1
SILICON CONTROLLED RECTIFIER
4 AMP, 100 THRU 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106A1 series
are PNPN silicon controlled rectifiers designed for
applications such as temperature, light, speed control,
process and remote control, and warning systems
where reliability of operation is important.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
C106
SYMBOL
A1
Peak Repetitive Off-State Voltage
VDRM, VRRM 100
RMS On-State Current
IT(RMS)
Peak One Cycle Surge (60Hz)
I²t Value for Fusing (t>1.5ms)
ITSM
I²t
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Peak Reverse Gate Voltage
Storage Temperature
Junction Temperature
Thermal Resistance
PGM
PG(AV)
IGFM
VGRM
Tstg
TJ
Θ_JC
Thermal Resistance
Θ_JA
C106
B1
200
C106
C1
300
C106
D1
400
4.0
20
0.5
0.5
0.1
0.2
6.0
-40 to +150
-40 to +110
3.0
75
C106
E1
500
C106
M1 UNITS
600 V
A
A
A²s
W
W
A
V
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=110°C
VTM
IFM=4.0A
IGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ
IGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ
0.4
VGT
VAK=6.0V, RL=100Ω, RGK=1.0KΩ, TC=-40°C
0.5
VGT
VAK=Rated VDRM, RL=3.0KΩ, RGK=1.0KΩ, TC=110°C 0.2
IHX
VD=12V, RGK=1.0KΩ
0.3
IHX
VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
IHX
VD=12V, RGK=1.0KΩ, TC=110°C
0.14
ILX
VD=12V, RGK=1.0KΩ
0.3
ILX
VD=12V, RGK=1.0KΩ, TC=-40°C
0.4
dv/dt
VD=Rated VDRM, RGK=1.0KΩ, TC=110°C
tgt (turn-on time)
tq (turn-off time)
TYP MAX UNITS
10
μA
100
μA
2.2
V
200
μA
500
μA
0.8
V
1.0
V
V
3.0
mA
6.0
mA
2.0
mA
4.0
mA
8.0
mA
8.0
V/μs
1.2
μs
40
μs
R1 (23-January 2012)