BUY49S Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN TRANSISTOR

BUY49S
HIGH VOLTAGE
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BUY49S is a
NPN Silicon Transistor designed for high voltage,
high current applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JC
Θ_JA
250
200
6.0
3.0
5.0
1.0
-65 to +200
15
175
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=200V
ICBO
VCB=200V, TC=150°C
BVCBO
IC=100µA
250
BVCEO
IC=20mA
200
BVEBO
IE=1.0mA
6.0
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=500mA, IB=50mA
hFE
VCE=5.0V, IC=20mA
40
hFE
VCE=5.0V, IC=500mA
40
hFE
VCE=2.0V, IC=20mA, TC=–55°C
16
fT
VCE=10V, IC=100mA
50
Cob
VCB=10V, IE=0, f=1.0MHz
ton
VCC=20V, IC=500mA, IB1=IB2=50mA
toff
VCC=20V, IC=500mA, IB1=IB2=50mA
IS/B*
VCE=50V
0.2
* Pulsed: 1.0s non repetitive pulse.
MAX
0.1
50
0.2
1.1
30
0.3
1.0
UNITS
V
V
V
A
A
W
°C
°C/W
°C/W
UNITS
µA
µA
V
V
V
V
V
MHz
pF
µs
µs
A
R0 (27-August 2010)