BUW34 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

BUW34
BUW35
BUW36
NPN SILICON
POWER TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BUW34, BUW35,
and BUW36 types are silicon NPN power transistors
designed for high voltage, fast switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VCES
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JC
BUW34 BUW35 BUW36
500
800
900
400
400
450
7.0
10
5.0
125
-65 to +200
1.4
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
VCE=Rated VCES
ICES
VCE=Rated VCES, TC=125°C
IEBO
VEB=7.0V
BVCEO
IC=100mA (BUW34, BUW35)
400
BVCEO
IC=100mA (BUW36)
450
VCE(SAT)
IC=5.0A, IB=1.0A
VCE(SAT)
IC=8.0A, IB=2.5A (BUW35)
VCE(SAT)
IC=8.0A, IB=2.5A (BUW36)
VBE(SAT)
IC=5.0A, IB=1.0A
VBE(SAT)
IC=8.0A, IB=2.5A (BUW35, BUW36)
hFE
VCE=5.0V, IC=1.0A
15
ton
IC=5.0A, IB1=1.0A, VCC=250V
toff
IC=5.0A, IB1=IB2=1.0A, VCC=250V
MAX
500
3
1
1.5
1.5
3.0
1.5
1.8
0.7
3.8
UNITS
μA
mA
mA
V
V
V
V
V
V
V
μs
μs
R0 (5-March 2008)