BU806 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

BU806
BU807
NPN SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BU806 and
BU807 types are NPN Silicon Darlington Transistors
designed for high voltage, high current, fast switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
Θ_JC
BU806
400
BU807
330
400
330
200
150
6.0
8.0
15
2.0
60
-65 to +150
70
2.08
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICES
VCE=400V (BU806)
ICES
VCE=330V (BU807)
ICEV
VCE=400V, VEB=6.0V (BU806)
ICEV
VCE=330V, VEB=6.0V (BU807)
IEBO
VEB=6.0V
BVCEO
IC=100mA (BU806)
200
BVCEO
IC=100mA (BU807)
150
VCE(SAT) IC=5.0A, IB=50mA
VBE(SAT) IC=5.0A, IB=50mA
VF
IF=4.0A
ton
VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
0.35
toff
VCC=100V, IC=5.0A, IB1=50mA, IB2=500mA
0.4
MAX
100
100
100
100
3.5
1.5
2.4
2.0
1.0
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
μs
μs
R0 (4-August 2011)