BSX62 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistors

BSX62
BSX63
NPN SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BSX62,
BSX63 types are NPN Silicon Transistors
designed for general purpose applications
where high collector current is required.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JC
BSX62
60
BSX63
80
40
60
5.0
3.0
5.0
-65 to +200
35
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
ICBO
ICBO
ICBO
IEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
VBE(ON)
hFE
hFE
Cob
fT
ton
toff
VCB=40V (BSX62)
VCB=40V, TC=150°C (BSX62)
VCB=60V (BSX63)
VCB=60V, TC=150°C (BSX63)
VEB=5.0V
IC=1.0A, IB=100mA
IC=2.0A, IB=200mA
IC=1.0A, IB=100mA
IC=2.0A, IB=200mA
VCE=1.0V, IC=100mA
VCE=1.0V, IC=1.0A
VCE=5.0V, IC=2.0A
VCE=1.0V, IC=1.0A (BSX62, 63-10)
63
VCE=1.0V, IC=1.0A (BSX62, 63-16)
100
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=200mA, f=100MHz
30
IC=1.0A, IB1=IB2=50mA
IC=1.0A, IB1=IB2=50mA
4.0
MAX
100
100
100
100
100
0.7
0.8
1.2
1.3
1.0
1.2
1.3
160
250
70
300
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
μA
nA
μA
nA
V
V
V
V
V
V
V
pF
MHz
ns
μs
R0 (2-April 2008)