BFX89 Datasheet, PDF (1/2 Pages) STMicroelectronics – WIDE BAND VHF/UHF AMPLIFIER

BFX89
BFY90
NPN SILICON
RF TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BFX89 and
BFY90 are Silicon NPN Epitaxial Planar Transistors
mounted in a hermetically sealed package
designed for VHF/UHF amplifier, oscillator, and
converter applications.
MARKING CODE: FULL PART NUMBER
JEDEC TO-72 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage (RBE≤50Ω)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current (f ≥ 1 MHz)
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
ICM
PD
PD
TJ,Tstg
Θ_JA
Θ_JC
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
BFX89
SYMBOL TEST CONDITIONS
MIN TYP MAX
ICBO
BVCBO
BVCER
BVCEO
BVEBO
hFE
hFE
fT
fT
Cob
Cre
VCB=15V
IC=10µA
IC=1.0mA, RBE=50Ω
IC=1.0mA
IE=10µA
VCE=1.0V, IC=2.0mA
VCE=1.0V, IC=25mA
VCE=5.0V, IC=2.0mA, f=500MHz
VCE=5.0V, IC=25mA, f=500MHz
VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=2.0mA, f=1.0MHz
10
30
30
15
2.5
20
150
20
125
1.0
1.2
1.7
0.6
30
30
15
2.5
25
50
200
300
-65 to +200
875
583
UNITS
V
V
V
V
mA
mA
mW
mW
°C
°C/W
°C/W
BFY90
MIN TYP MAX
10
30
30
15
2.5
25
150
20
125
1.0 1.1
1.3 1.4
1.5
0.6 0.8
UNITS
nA
V
V
V
V
GHz
GHz
pF
pF
R3 (20-March 2006)