BD675 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium-Power Silicon NPN Darlingtons

BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD675 Series
types are NPN Silicon Darlington Power Transistors,
available in the plastic TO-126 package, and are
designed for audio and video output applications.
MARKING: FULL PART NUMBER
TO-126 CASE
BD675
MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A
Collector-Base Voltage
VCBO
45
Collector-Emitter Voltage
VCEO
45
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
BD677
BD677A
60
60
BD679
BD679A
80
80
5.0
4.0
100
40
BD681
100
100
-65 to +150
3.13
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TC=100°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (BD675, BD675A)
45
BVCEO
IC=50mA (BD677, BD677A)
60
BVCEO
IC=50mA (BD679, BD679A)
80
BVCEO
IC=50mA (BD681)
100
BVCEO
IC=50mA (BD683)
120
VCE(SAT)
IC=1.5A, IB=30mA (Non-A)
VCE(SAT)
IC=2.0A, IB=40mA (A)
VBE(ON)
VCE=3.0V, IC=1.5A (Non-A)
VBE(ON)
VCE=3.0V, IC=2.0A (A)
hFE
VCE=3.0V, IC=1.5A (Non-A)
750
hFE
VCE=3.0V, IC=2.0A (A)
750
hfe
VCE=3.0V, IC=1.5A, f=1.0MHz
1.0
MAX
200
2.0
500
2.0
2.5
2.8
2.5
2.5
BD683
120
120
UNITS
V
V
V
A
mA
W
°C
°C/W
UNITS
µA
mA
µA
mA
V
V
V
V
V
V
V
V
V
R1 (14-June 2010)