BD439 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

BD439 BD441 NPN
BD440 BD442 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD439, BD440
series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process,
designed for medium power, low speed switching
applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (t≤10ms)
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
Θ_JC
BD439
BD440
BD441
BD442
60
80
60
80
60
80
5.0
4.0
7.0
1.0
36
-65 to +150
100
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICES
IEBO
VCE=Rated VCEO
VEB=5.0V
BVCEO
IC=100mA (BD439, BD440)
60
BVCEO
IC=100mA (BD441, BD442)
80
VCE(SAT)
VBE(ON)
IC=2.0A, IB=200mA
VCE=1.0V, IC=2.0A
hFE
VCE=5.0V, IC=10mA (BD439, BD440)
20
hFE
VCE=5.0V, IC=10mA (BD441, BD442)
15
hFE
VCE=1.0V, IC=500mA
40
hFE
VCE=1.0V, IC=2.0A (BD439, BD440)
25
hFE
VCE=1.0V, IC=2.0A (BD441, BD442)
15
fT
VCE=1.0V, IC=250mA
3.0
MAX
100
100
1.0
0.8
1.5
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
mA
V
V
V
V
MHz
R1 (2-February 2009)