BD135 Datasheet, PDF (1/2 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

BD135
BD137
BD139
NPN SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation (Tmb≤70°C)
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL BD135 BD137 BD139
VCBO
45
60
100
VCEO
45
60
80
VEBO
5.0
IC
1.5
ICM
2.0
IB
0.5
IBM
1.0
PD
8.0
PD
1.25
TJ, Tstg
-65 to +150
Θ_Jmb
10
Θ_JA
100
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
VCB=30V
100
ICBO
VCB=30V, TC=125°C
10
IEBO
VEB=5.0V
100
BVCEO
IC=30mA (BD135)
45
BVCEO
IC=30mA (BD137)
60
BVCEO
IC=30mA (BD139)
80
VCE(SAT)
IC=500mA, IB=50mA
0.5
VBE(ON)
VCE=2.0V, IC=500mA
1.0
hFE
VCE=2.0V, IC=5.0mA
40
hFE
VCE=2.0V, IC=150mA
63
250
hFE
VCE=2.0V, IC=500mA
25
fT
VCE=5.0V, IC=50mA, f=100MHz
190
UNITS
nA
µA
nA
V
V
V
V
V
MHz



SYMBOL
TEST CONDITIONS
hFE
VCE=2.0V, IC=500mA
BD135-10
BD137-10
BD139-10
MIN MAX
63 160
BD135-16
BD137-16
BD139-16
MIN MAX
100 250
R3 (18-September 2009)