BCY78 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistors

DATA SHEET
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current (Peak)
ICM
Base Current (Peak)
IBM
Power Dissipation
PD
Power Dissipation(TC=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
BCY78
32
32
5.0
100
200
200
340
1.0
BCY79
45
45
-65 to +200
450
150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
VCB= Rated VCBO
ICBO
VCB= Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BCY78)
BVCBO
IC=10µA (BCY79)
BVCEO
IC=2.0mA (BCY78)
BVCEO
IC=2.0mA (BCY79)
BVEBO
IE=1.0µA
VCE(SAT)
IC=10mA, IB=250µA
VCE(SAT)
IC=100mA, IB=2.5mA
VBE(SAT)
IC=10mA, IB=250µA
VBE(SAT)
IC=100mA, IB=2.5mA
VBE(ON)
VCE=5.0V, IC=2.0mA
MIN
32
45
32
45
5.0
0.60
0.70
0.60
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
SYMBOL
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=5.0V, IC=10µA
VCE=5.0V, IC=2.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
BCY78-VII
BCY79-VII
MIN MAX
140 TYP
120 220
80
40
BCY78-VIII
BCY79-VIII
MIN MAX
30
180 310
120 400
45
BCY78-IX
BCY79-IX
MIN MAX
40
250 460
160 630
60
BCY78-X
BCY79-X
MIN MAX
100
380 630
240 1000
60
(SEE REVERSE SIDE)
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
R3