BCX70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX70 Series
types are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODES: BCX70G: AG
BCX70H: AH
BCX70J: AJ
BCX70K: AK
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ_JA
45
45
5.0
100
200
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=45V
ICBO
VCB=45V, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10μA
45
BVCEO
IC=10mA
45
BVEBO
IE=1.0μA
5.0
VCE(SAT) IC=10mA, IB=250μA
0.05
VCE(SAT) IC=50mA, IB=1.25mA
0.10
VBE(SAT) IC=10mA, IB=250μA
0.60
VBE(SAT) IC=50mA, IB=1.25mA
0.70
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
fT
VCE=5.0V, IC=10mA, f=100MHz
100
250
Cc
VCB=10V, IE=0, f=1.0MHz
1.7
Ce
VEB=0.5V, IC=0, f=1.0MHz
11
NF
VCE=5.0V, IC=200μA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz
MAX
20
20
20
0.35
0.55
0.85
1.05
0.75
6.0
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
BCX70G
BCX70H
BCX70J
BCX70K
MIN MAX MIN MAX MIN MAX MIN MAX
hFE
VCE=5.0V, IC=10μA
40
30
100
hFE
VCE=5.0V, IC=2.0mA
120 220 180 310
250 460
380 630
hFE
VCE=1.0V, IC=50mA
50
70
90
100
R2 (20-November 2009)