BCW67_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

BCW67 SERIES
BCW68 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW67 and BCW68
Series types are PNP Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Conitinuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ_JA
BCW67
BCW68
45
60
32
45
5.0
800
1.0
100
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCEO
ICBO
VCB= Rated VCEO, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10µA (BCW67)
45
BVCBO
IC=10µA (BCW68)
60
BVCEO
IC=10mA (BCW67)
32
BVCEO
IC=10mA (BCW68)
45
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=100mA, IB=10mA
VBE(SAT)
IC=500mA, IB=50mA
fT
VCE=5.0V, IC=50mA, f=20MHz
200
Cc
VCB=10V, IE=0, f=1.0MHz
6.0
Ce
VEB=0.5V, IC=0, f=1.0MHz
60
MAX
20
20
20
0.3
0.7
1.25
2.0
UNITS
V
V
V
mA
A
mA
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
hFE
VCE=10V, IC=100µA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=100mA
hFE
VCE=2.0V, IC=500mA
BCW67A
BCW68F
MIN MAX
35
75
100 250
35
BCW67B
BCW68G
MIN MAX
50
120
160 400
60
BCW67C
BCW68H
MIN MAX
80
180
250 630
100
R2 (20-November 2009)