BCW65 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistors (For general AF applications High current gain)

BCW65 SERIES
BCW66 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW65 and
BCW66 Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
Θ_JA
BCW65
BCW66
60
75
32
45
5.0
800
1.0
100
200
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCEO
ICBO
VCB= Rated VCEO, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10µA (BCW65)
60
BVCBO
IC=10µA (BCW66)
75
BVCEO
IC=10mA (BCW65)
32
BVCEO
IC=10mA (BCW66)
45
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=100mA, IB=10mA
VBE(SAT)
IC=500mA, IB=50mA
fT
VCE=5.0V, IC=50mA, f=20MHz
170
Cc
VCB=10V, IE=0, f=1.0MHz
6.0
Ce
VEB=0.5V, IC=0, f=1.0MHz
60
MAX
20
20
20
0.3
0.7
1.25
2.0
BCW65A
BCW65B
BCW66F
BCW66G
MIN MAX
MIN MAX
hFE
VCE=10V, IC=100µA
35
50
hFE
VCE=1.0V, IC=10mA
75
110
hFE
VCE=1.0V, IC=100mA
100 250
160 400
hFE
VCE=2.0V, IC=500mA
35
60
UNITS
V
V
V
mA
A
mA
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
BCW65C
BCW66H
MIN MAX
80
180
250 630
100
R2 (20-November 2009)