BCV47 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON TRANSISTOR

BCV47
SURFACE MOUNT SILICON
NPN DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 is a silicon
NPN Darlington transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount package,
designed for applications requiring extremely high gain.
MARKING CODE: FG
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
80
60
10
500
800
100
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
IEBO
VBE=10V
BVCEO
IC=10mA
60
BVCBO
IC=10μA
80
BVEBO
IE=100nA
10
VCE(SAT) IC=100mA, IB=0.1mA
VBE(SAT) IC=100mA, IB=0.1mA
hFE
VCE=5.0V, IC=1.0mA
2,000
hFE
VCE=5.0V, IC=10mA
4,000
hFE
VCE=5.0V, IC=100mA
10,000
fT
VCE=5.0V, IC=30mA, f=100MHz
220
MAX
100
100
1.0
1.5
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
R3 (23-April 2015)