BC856_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

BC856 SERIES
BC857 SERIES
BC858 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856, BC857
and BC858 Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to the end of
the Part # and Marking Code.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ_JA
BC858
30
30
BC857
50
45
5.0
100
200
200
350
-65 to +150
357
BC856
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BC858)
30
BVCBO
IC=10μA (BC857)
50
BVCBO
IC=10μA (BC856)
80
BVCEO
IC=10mA (BC858)
30
BVCEO
IC=10mA (BC857)
45
BVCEO
IC=10mA (BC856)
65
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
0.6
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
100
NF
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
hFE
VCE=5.0V, IC=2.0mA
BC856A
BC857A
BC858A
MIN MAX
125 250
MAX
15
4.0
100
0.30
0.65
0.75
0.82
10
BC856B
BC857B
BC858B
MIN MAX
220 475
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
dB
BC857C
BC858C
MIN MAX
420 800
R2 (20-November 2009)