BC856T Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

BC856T SERIES
BC857T SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856T and
BC857T Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-523 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ_JA
BC857T
BC856T
50
80
45
65
5.0
100
200
100
250
-65 to +150
500
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BC857T)
50
BVCBO
IC=10μA (BC856T)
80
BVCEO
IC=10mA (BC857T)
45
BVCEO
IC=10mA (BC856T)
65
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
0.58
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
100
Cc
VCB=10V, IE=0, f=1.0MHz
Ce
VEB=0.5V, IC=0, f=1.0MHz
10
NF
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
MAX
15
5.0
100
0.20
0.40
0.70
0.77
2.5
10
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
BC856AT
BC856BT
BC857AT
BC857BT
BC857CT
MIN MAX
MIN MAX
MIN MAX
hFE
VCE=5.0V, IC=2.0mA
125 250
220 475
420 800
R1 (20-November 2009)