BC856 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

BC856 SERIES
BC857 SERIES
BC858 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856,
BC857 and BC858 Series types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose switching
and amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
BC858
30
30
BC857
50
45
5.0
100
200
200
350
-65 to +150
357
BC856
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB= 30V
ICBO
VCB= 30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BC858)
30
BVCBO
IC=10µA (BC857)
50
BVCBO
IC=10µA (BC856)
80
BVCEO
IC=10mA (BC858)
30
BVCEO
IC=10mA (BC857)
45
BVCEO
IC=10mA (BC856)
65
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
0.6
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
100
NF
VCE=5.0V, IC=200µA,
RS=2KΩ, f= 1KHz, BW=200Hz
BC856A
BC857A
BC858A
MIN MAX
hFE
VCE=5.0V, IC=2.0mA
125 250
TYP
MAX
15
4.0
100
0.3
0.65
0.75
0.82
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
10
dB
BC856B
BC857B
BC858B
MIN MAX
220 475
BC857C
BC858C
MIN MAX
420 800
R1 (10-September 2004)