BC846W Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

BC846W SERIES
BC847W SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini^TM surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ_JA
BC847W
BC846W
50
80
45
65
5.0
100
200
200
275
-65 to +150
455
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BC847W)
50
BVCBO
IC=10μA (BC846W)
80
BVCEO
IC=10mA (BC847W)
45
BVCEO
IC=10mA (BC846W)
65
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
0.58
VBE(ON)
IC=10mA, VCE=5.0V
Cob
VCB=10V, IE=0, f=1.0MHz
fT
VCE=5.0V, IC=10mA, f=100MHz
100
NF
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
MAX
15
5.0
100
0.25
0.60
0.70
0.77
3.0
10
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
pF
MHz
dB
hFE
VCE=5.0V, IC=2.0mA
BC846AW
BC847AW
MIN MAX
110 220
BC846BW
BC847BW
MIN MAX
200
450
BC847CW
MIN MAX
420 800
R1 (20-November 2009)