BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

BC817 SERIES
BC818 SERIES
SURFACE MOUNT SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC817 and BC818
series devices are silicon NPN transistors, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON
FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ_JA
BC817
50
BC818
30
45
25
5.0
500
1.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
A
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=20V
ICBO
VCB=20V, TJ=150°C
IEBO
VEB=5.0V
BVCES
IC=10μA (BC817)
50
BVCES
IC=10μA (BC818)
30
BVCEO
IC=10mA (BC817)
45
BVCEO
IC=10mA (BC818)
25
BVEBO
IE=1.0μA
5.0
VCE(SAT) IC=500mA, IB=50mA
VBE(ON)
VCE=1.0V, IC=500mA
fT
VCE=5.0V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
10
MAX
100
5.0
100
0.7
1.2
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
BC817
BC817-16
BC817-25
BC817-40
BC818
BC818-16
BC818-25
BC818-40
MIN MAX MIN MAX MIN MAX MIN MAX
hFE
VCE=1.0V, IC=100mA
100 600 100 250 160 400 250 600
hFE
VCE=1.0V, IC=500mA
40
-
40
-
40 -
40 -
R1 (11-November 2013)