BC107 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
_JC
BC107
50
45
6.0
BC108 BC109
30
30
25
25
5.0
5.0
200
600
-65 to +200
175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V (BC107)
ICBO
VCB=45V, TA=125°C (BC107)
ICBO
VCB=25V (BC108, BC109)
ICBO
VCB=25V, TA=125°C (BC108, BC109)
BVCEO
IC=2.0mA (BC107)
45
BVCEO
IC=2.0mA (BC108, BC109)
25
BVEBO
IE=10μA (BC107)
6.0
BVEBO
IE=10μA (BC108, BC109)
5.0
VCE(SAT) IC=10mA, IB=0.5mA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=0.5mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
VBE(ON)
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40
hFE
VCE=5.0V, IC=10μA (BC108C, BC109C)
100
hFE
VCE=5.0V, IC=2.0mA (BC107)
110
hFE
VCE=5.0V, IC=2.0mA (BC107A)
110
hFE
VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
hFE
VCE=5.0V, IC=2.0mA (BC108C, BC109C)
420
TYP
MAX
15
4.0
15
4.0
0.25
0.6
0.7
0.83
1.0
1.05
0.7
0.77
450
220
450
800
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
μA
V
V
V
V
V
V
V
V
V
V
R1 (16-August 2012)