BAW101_11 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES

BAW101
SURFACE MOUNT
DUAL, ISOLATED HIGH VOLTAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW101 consists
of two electrically islolated high voltage switching
diodes packaged in an epoxy molded SOT-143 surface
mount case. This device is designed for applications
requiring dual high voltage switching diodes.
MARKING CODES: CJP or BAW101
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
300
300
200
400
4.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
IR
BVR
VF
CT
trr
VR=250V
150
VR=250V, TA=150°C
50
IR=100μA
300
IF=100mA
0.9
1.3
VR=0, f=1.0MHz
5.0
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
A
mW
°C
°C/W
UNITS
nA
μA
V
V
pF
ns
R7 (8-February 2011)