BAW101 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)

NEW
BAW101
DUAL, ISOLATED HIGH VOLTAGE
SWITCHING DIODES
SOT-143 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION
The CENTRAL SEMICONDUCTOR BAW101
type is a Silicon Dual Isolated High Voltage
Switching diode designed for surface mount
switching applications requiring high voltage
capabilities.
Marking Code is CJP.
SYMBOL
VR
VRRM
IF
IFRM
IFSM
PD
TJ,Tstg
Q_JA
300
300
200
500
4500
350
UNITS
V
V
mA
mA
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL
IR
IR
BVR
VF
CT
trr
TEST CONDITIONS
VR=250V
VR=250V, TA=150°C
IR=100mA
IF=100mA
VR=0V, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100W
MIN TYP MAX
150
50
300
0.9 1.3
5.0
50
UNITS
nA
mA
V
V
pF
ns
90