BAW100 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)

BAW100
BAW100G
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW100 and
BAW100G each consist of two electrically isolated high
speed silicon switching diodes packaged in an epoxy
molded SOT-143 surface mount case. This device is
designed for high speed switching applications.
• The BAW100G is Halogen Free by design.
MARKING CODES:
BAW100: CJSS
BAW100G: CJSG
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
85
250
500
4.0
2.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=25V, TA=150°C
30
IR
VR=75V
1.0
IR
VR=75V, TA=150°C
50
BVR
IR=100μA
85
VF
IF=1.0mA
715
VF
IF=10mA
855
VF
IF=50mA
1.00
VF
IF=150mA
1.25
CT
VR=0, f=1.0MHz
2.0
trr
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
6.0
UNITS
V
V
mA
mA
A
A
A
mW
°C
°C/W
UNITS
μA
μA
μA
V
mV
mV
V
V
pF
ns
R4 (20-November 2009)