BAS56_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES

BAS56
SURFACE MOUNT
DUAL, ISOLATED HIGH CURRENT
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded surface
mount SOT-143 case. This device is designed for high
speed switching applications.
MARKING CODE: L51 or WL5
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
60
60
200
400
4.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=60V
100
IR
VR=60V, TA=150°C
100
IR
VR=75V
10
VF
IF=10mA
0.75
VF
IF=200mA
1.0
VF
IF=500mA
1.25
CT
VR=0, f=1.0MHz
2.5
trr
IF=IR=400mA, Irr=40mA, RL=100Ω
6.0
Qs
IF=10mA, VR=5.0V, RL=500Ω
50
VFR
IF=400mA, tr=30ns
1.2
VFR
IF=400mA, tr=100ns
1.5
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
μA
V
V
V
pF
ns
pC
V
V
R7 (25-August 2010)