BAS28_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES

BAS28
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded SOT-143
surface mount case. This device is designed for high
speed switching applications.
MARKING CODE: A61 or JTW
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
85
250
500
4.0
2.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=25V, TA=150°C
30
IR
VR=75V
1.0
IR
VR=75V, TA=150°C
50
VF
IF=1.0mA
715
VF
IF=10mA
855
VF
IF=50mA
1.00
VF
IF=150mA
1.25
CT
VR=0, f=1.0MHz
2.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
6.0
Qs
IF=10mA, VR=5.0V, RL=500Ω
45
VFR
IF=10mA, tr=20ns
1.75
UNITS
V
V
mA
mA
A
A
A
mW
°C
°C/W
UNITS
μA
μA
μA
mV
mV
V
V
pF
ns
pC
V
R7 (20-October 2010)