BAS28 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAS28
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODE
Central^TM
Semiconductor Corp.
SOT-143 CASE
MAXIMUM RATINGS (TA=25^oC)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 msec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high speed switching applications.
Marking code is A61.
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
75
85
250
250
4000
2000
1000
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
mA
mA
mW
o_C
o_C/W
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
VF
CT
trr
Qs
VFR
TEST CONDITIONS
MIN
VR=25V, TA=150^oC
VR=75V
VR=75V, TA=150^oC
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=0, f=1 MHz
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
IF=10mA, VR=5.0V, RL=500Ω
IF=10mA, tr=20ns
MAX
30
1.0
50
0.715
0.855
1.000
1.250
2.0
6.0
45
1.75
UNITS
µA
µA
µA
V
V
V
V
pF
ns
pC
V
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