2N7002_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an
N-Channel enhancement-mode MOSFET manufactured
by the N-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications.
MARKING CODE: 702
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
60
60
40
115
75
115
800
800
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF
VGS=20V
IGSSR
VGS=20V
IDSS
VDS=60V, VGS=0
IDSS
VDS=60V, VGS=0, TA=125°C
ID(ON)
VDS=10V, VGS=10V
500
BVDSS
ID=10μA
60
105
VGS(th)
VDS=VGS, ID=250μA
1.0
2.1
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=11.5mA
rDS(ON)
VGS=10V, ID=500mA
3.7
rDS(ON)
VGS=10V, ID=500mA, TA=100°C
rDS(ON)
VGS=5.0V, ID=50mA
6.2
rDS(ON)
VGS=5.0V, ID=50mA, TA=100°C
gFS
VDS=10V, ID=200mA
80
MAX
100
100
1.0
500
2.5
3.75
0.375
1.5
7.5
13.5
7.5
13.5
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
UNITS
nA
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
R6 (9-February 2015)