2N6676 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,175W)

2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
2N6676
450
300
2N6677
550
350
8.0
15
20
5.0
175
-65 to +200
1.0
2N6678
650
400
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
VEB=8.0V
BVCEO
IC=200mA (2N6676)
300
BVCEO
IC=200mA (2N6677)
350
BVCEO
IC=200mA (2N6678)
400
VCE(SAT) IC=15A, IB=3.0A
VBE(SAT) IC=15A, IB=3.0A
hFE
VCE=3.0V, IC=15A
8.0
Cob
VCB=10V, IE=0, f=1.0MHz
ft
VCE=10V, IC=1.0A, f=5.0MHz
3.0
td
tr
ts
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
tf
MAX
100
1.0
2.0
1.5
1.5
500
10
0.1
0.6
2.5
0.5
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
μs
R0 (26-July 2010)