2N6674 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistors

2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
2N6674
450
2N6675
650
300
400
7.0
15
20
5.0
175
-65 to +200
1.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE=1.5V
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
IEBO
VEB=7.0V
BVCEO IC=200mA (2N6674)
300
BVCEO IC=200mA (2N6675)
400
VCE(SAT) IC=10A, IB=2.0A
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
VCE(SAT) IC=15A, IB=5.0A
VBE(SAT) IC=10A, IB=2.0A
hFE
VCE=2.0V, IC=10A
8.0
IS/b
VCE=30V, IC=5.9A
1.0
IS/b
VCE=100V, IC=250mA
1.0
hfe
VCE=10V, IC=1.0A, f=5.0MHz
3.0
ft
VCE=10V, IC=1.0A, f=5.0MHz
15
Cob
VCB=10V, IE=0, f=100kHz
150
MAX
0.1
1.0
2.0
1.0
2.0
5.0
1.5
20
10
50
500
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
s
s
MHz
pF
R1 (10-March 2011)