2N6605 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 0.35 AMP, 30 THRU 200 VOLTS

2N6605
2N6606
2N6607
2N6608
SILICON CONTROLLED RECTIFIER
0.35 AMP, 30 THRU 200 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6605 Series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed for
control systems and sensing circuit applications.
TO-18 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Peak Repetitive Off-State Voltage
Average On-State Current
Peak One Cycle Surge Current (t=8.3ms)
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
SYMBOL
VDRM, VRRM
IO
ITSM
VGM
TJ
Tstg
2N6605
30
2N6606 2N6607
60
100
0.35
6.0
8.0
-40 to +125
-40 to +150
2N6608 UNITS
200
V
A
A
V
°C
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IDRM
IRRM
IGT
VGT
VTM
IH
Rated VDRM, RGK=1.0KΩ
Rated VRRM
VD=6.0V, RL=100Ω
VD=6.0V, RL=100Ω
IT=2.0A
RGK=1.0KΩ
MAX
120
250
200
0.8
2.0
5.0
UNITS
nA
nA
μA
V
V
mA
R0 (30-March 2011)