2N6576 Datasheet, PDF (1/2 Pages) General Semiconductor – 15 AMPERE NPN DARLINGTON POWER TRAN

2N6576
2N6577
2N6578
SILICON
NPN DARLINGTON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6576, 2N6577,
and 2N6578 are silicon NPN Darlington power
transistors designed for general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Continuous Emitter Current
Peak Emitter Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ, Tstg
_JC
2N6576
60
60
2N6577
90
90
7.0
15
30
250
500
15.25
30.50
120
-65 to +200
1.46
2N6578
120
120
UNITS
V
V
V
A
A
mA
mA
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VEB=1.5V
ICER
VCE=Rated VCEO, RBE=10kΩ, TC=150°C
ICEO
VCE=Rated VCEO
IEBO
VEB=7.0V
BVCEO
IC=200mA (2N6576)
60
BVCEO
IC=200mA (2N6577)
90
BVCEO
IC=200mA (2N6578)
120
VCE(SAT) IC=10A, IB=100mA
VCE(SAT) IC=15A, IB=150mA
VBE(SAT) IC=10A, IB=100mA
VBE(SAT) IC=15A, IB=150mA
hFE
VCE=3.0V, IC=400mA
200
hFE
VCE=3.0V, IC=4.0A
2.0K
hFE
VCE=3.0V, IC=10A
500
hFE
VCE=4.0V, IC=15A
100
MAX
500
5.0
5.0
1.0
7.5
2.8
4.0
3.5
4.5
20K
5.0K
UNITS
μA
mA
mA
mA
mA
V
V
V
V
V
V
V
R1 (4-April 2014)