2N6548 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON DARLINGTON TRANSISTORS

2N6548
2N6549
NPN SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6548 series
types are NPN silicon Darlington transistors designed
for amplifier and driver applications where high gain at
a high collector current is important.
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=30V
IEBO
VEB=10V
BVCBO
lC=100μA
BVCES
lC=100μA
BVEBO
lE=10μA
VCE(SAT)
lC=1.0A, IB=2.0mA
VCE(SAT)
lC=2.0A, IB=4.0mA
VBE(SAT)
lC=1.0A, IB=2.0mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=200mA
hFE
VCE=5.0V, IC=500mA
hFE
VCE=5.0V, IC=1.0A
hfe
VCE=5.0V, IC=50mA, f=1.0kHz
fT
VCE=5.0V, lC=200mA, f=100MHz
Cob
VCB=10V, lE=0, f=1.0MHz
2N6548
MIN MAX
-
100
-
100
50
-
40
-
12
-
-
1.5
-
2.0
-
2.0
-
2.0
25K 150K
15K
-
5K
-
20K
-
100
-
-
7.0
50
40
40
12
2.0
0.1
2.0
10
-65 to +150
62.5
12.5
UNITS
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
2N6549
MIN MAX
-
100
-
100
50
-
40
-
12
-
-
1.5
-
2.0
-
2.0
-
2.0
15K 150K
10K -
3K
-
15K -
100
-
-
7.0
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R1 (23-January 2012)