2N6544 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,125W)

2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6544, 2N6545
types are Silicon NPN Triple Diffused Mesa Transistors
designed for high voltage, high current, high speed
switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Emitter Current
Peak Emitter Current
Continuous Base Current
Peak Base Current
Power Dissipation
Power Dissipation, TC=100°C
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEX
VCEO
VEBO
IC
ICM
IE
IEM
IB
IBM
PD
PD
TJ, Tstg
Θ_JC
2N6544
2N6545
650
850
350
450
300
400
9.0
8.0
16
16
32
8.0
16
125
71.5
-65 to +200
1.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6544
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
- 0.5
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
- 2.5
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
- 3.0
IEBO
VEB=9.0V
- 1.0
BVCEX
VCL=Rated VCEX, IC=4.5A, TC=100°C
350 -
BVCEX
VCL=Rated VCEO-100V, IC=8.0A, TC=100°C 200 -
BVCEO IC=100mA
300 -
VCE(SAT) IC=5.0A, IB=1.0A
- 1.5
VCE(SAT) IC=8.0A, IB=2.0A
- 5.0
VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C
- 2.5
VBE(SAT) IC=5.0A, IB=1.0A
- 1.6
VBE(SAT) IC=5.0A, IB=1.0A, TC=100°C
- 1.6
hFE
VCE=3.0V, IC=2.5A
12 60
hFE
VCE=3.0V, IC=5.0A
7.0 35
2N6545
MIN MAX
- 0.5
- 2.5
- 3.0
- 1.0
450 -
300 -
400 -
- 1.5
- 5.0
- 2.5
- 1.6
- 1.6
12 60
7.0 35
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R1 (7-February 2011)