2N6530 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS

DATA SHEET
2N6530
2N6531
2N6532
2N6533
NPN POWER TRANSISTOR
TO-220 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power
applications requiring extremely high gain.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEV
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JC
2N6530
80
80
80
80
2N6531 2N6532
100
100
100
100
100
100
100
100
5.0
8.0
15
65
2N6533
120
120
120
120
-65 to +150
1.92
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6530
2N6531
2N6532
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
ICEO
VCE=Rated VCEO
1.0
1.0
1.0
ICEV
VCE=Rated VCEV,
0.5
0.5
0.5
VEB=1.5V
ICEV
VCE=Rated VCEV,
5.0
5.0
5.0
VEB=5.0V, TC=125°C
IEBO
VEB=5.0V
5.0
5.0
5.0
BVCER
IC=200mA, RBE=100Ω
80
100
100
BVCEO
IC=200mA
80
100
100
BVCEV
IC=200mA, VEB=1.5V
80
100
100
VCE(SAT)
IC=3.0A, IB=6.0mA
3.0
VCE(SAT)
IC=5.0A, IB=10mA
2.0
2.0
VCE(SAT)
IC=8.0A, IB=80mA
3.0
3.0
3.0
VBE(ON)
VCE=3.0V, IC=3.0A
2.8
VBE(ON)
VCE=3.0V, IC=5.0A
2.8
2.8
VBE(ON)
VCE=3.0V, IC=8.0A
4.5
4.5
4.5
2N6533
MIN MAX
1.0
0.5
5.0
5.0
120
120
120
2.0
3.0
2.8
4.5
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
(CONTINUED ON REVERSE SIDE)
R0