2N6383 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,100W)

2N6383
2N6384
2N6385
NPN SILICON POWER
DARLINGTON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3683 SERIES
types are NPN Silicon Power Darlington Transistors
designed for power amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
2N6383 2N6384 2N6385
40
60
80
40
60
80
40
60
80
5.0
10
15
250
100
-65 to +200
1.75
UNITS
V
V
V
V
A
A
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
ICEV
ICEO
IEBO
BVCEO
BVCEO
BVCEO
BVCER
BVCER
BVCER
BVCEV
BVCEV
BVCEV
VCEV=Rated VCEO, VBE(off)=1.5V
VCEV=Rated VCEO, VBE(off)=1.5V, TC=150°C
VCE=Rated VCEO
VEB=5.0V
IC=200mA (2N6383)
40
IC=200mA (2N6384)
60
IC=200mA (2N6385)
80
IC=200mA, RBE=100Ω (2N6383)
40
IC=200mA, RBE=100Ω (2N6384)
60
IC=200mA, RBE=100Ω (2N6385)
80
IC=200mA, VBE(off)=1.5V (2N6383)
40
IC=200mA, VBE(off)=1.5V (2N6384)
60
IC=200mA, VBE(off)=1.5V (2N6385)
80
MAX
300
3.0
1.0
10
UNITS
μA
mA
mA
mA
V
V
V
V
V
V
V
V
V
R1 (28-August 2008)