2N6315 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7.0A,90W)

2N6315 2N6316 NPN
2N6317 2N6318 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6315 SERIES
types are complementary Silicon Power Transistors,
mounted in a hermetically sealed metal case,
designed for general purpose amplifier and switching
applications.
TO-66 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
2N6315
2N6317
60
2N6316
2N6318
80
60
80
5.0
7.0
15
2.0
90
-65 to +200
1.95
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
ICEO
VCE=1/2 Rated VCEO
IEBO
VEB=5.0V
BVCEO IC=100mA, (2N6315, 2N6317)
60
BVCEO IC=100mA, (2N6316, 2N6318)
80
VCE(SAT) IC=4.0A, IB=0.4A
VCE(SAT) IC=7.0A, IB=1.75A
VBE(SAT) IC=7.0A, IB=1.75A
VBE(ON) VCE=4.0V, IC=2.5A
hFE
VCE=4.0V, IC=0.5A
35
hFE
VCE=4.0V, IC=2.5A
20
hFE
VCE=4.0V, IC=7.0A
4.0
hfe
VCE=4.0V, IC=500mA, f=1.0kHz
20
fT
VCE=10V, IC=250mA, f=1.0MHz
4.0
MAX
0.25
0.25
2.0
0.50
1.0
1.0
2.0
2.5
1.5
100
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
R2 (6-April 2011)