2N6298 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A, 75W)

2N6298 2N6299 PNP
2N6300 2N6301 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6298 series
devices are complementary silicon Darlington power
transistors manufactured by the epitaxial base process
designed for high gain amplifier and medium speed
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
2N6298
2N6300
60
2N6299
2N6301
80
60
80
5.0
8.0
16
120
75
-65 to +200
2.33
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6298, 2N6300)
60
BVCEO
IC=100mA (2N6299, 2N6301)
80
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=3.0V, IC=4.0A
hFE
VCE=3.0V, IC=4.0A
750
hFE
VCE=3.0V, IC=8.0A
100
hfe
VCE=3.0V, IC=3.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=3.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
MAX
0.5
5.0
0.5
2.0
2.0
3.0
4.0
2.8
18K
200
300
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
R3 (2-September 2014)