2N6294 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON DARLINGTONl

2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6294, 2N6296
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and medium
speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
2N6294
2N6296
60
2N6295
2N6297
80
60
80
5.0
4.0
8.0
80
50
-65 to +200
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA, (2N6294, 2N6296)
60
BVCEO
IC=50mA, (2N6295, 2N6297)
80
VCE(SAT) IC=2.0A, IB=8.0mA
VCE(SAT) IC=4.0A, IB=40mA
VBE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=2.0A
hFE
VCE=3.0V, IC=2.0A
750
hFE
VCE=3.0V, IC=4.0A
100
hfe
VCE=3.0V, IC=1.5A, f=1.0kHz
300
fT
VCE=3.0V, IC=1.5A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
MAX
0.5
5.0
0.5
2.0
2.0
3.0
4.0
2.8
18K
120
200
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
R2 (2-September 2014)