2N6282 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,160W)

2N6282 2N6283 2N6284 NPN
2N6285 2N6286 2N6287 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6282, 2N6285
series devices are complementary silicon monolithic
Darlington transistors, manufactured by the epitaxial
base process, designed for general purpose high
current, high gain amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
2N6282
2N6285
60
60
2N6283
2N6286
80
80
5.0
20
40
0.5
160
-65 to +200
1.09
2N6284
2N6287
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEX
VCE=Rated VCEO, VEB=1.5V
ICEX
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA, (2N6282, 2N6285)
60
BVCEO
IC=100mA, (2N6283, 2N6286)
80
BVCEO
IC=100mA, (2N6284, 2N6287)
100
VCE(SAT) IC=10A, IB=40mA
VCE(SAT) IC=20A, IB=200mA
VBE(SAT) IC=20A, IB=200mA
VBE(ON)
VCE=3.0V, IC=10A
hFE
VCE=3.0V, IC=10A
750
hFE
VCE=3.0V, IC=20A
100
hfe
VCE=3.0V, IC=10A, f=1.0kHz
300
fT
VCE=3.0V, IC=10A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
MAX
0.5
5.0
1.0
2.0
2.0
3.0
4.0
2.8
18K
400
600
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (4-February 2014)