2N6050 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,150W)

2N6050 2N6051 2N6052 PNP
2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6050, 2N6057
series types are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
2N6050
2N6057
60
60
2N6051
2N6058
80
80
5.0
12
20
0.2
150
-65 to +200
1.17
2N6052
2N6059
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA, (2N6050, 2N6057)
60
BVCEO
IC=100mA, (2N6051, 2N6058)
80
BVCEO
IC=100mA, (2N6052, 2N6059)
100
VCE(SAT) IC=6.0A, IB=24mA
VCE(SAT) IC=12A, IB=120mA
VBE(SAT) IC=12A, IB=120mA
VBE(ON)
VCE=3.0V, IC=6.0A
hFE
VCE=3.0V, IC=6.0A
750
hFE
VCE=3.0V, IC=12A
100
hfe
VCE=3.0V, IC=5.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=5.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz (PNP types)
Cob
VCB=10V, IE=0, f=100kHz (NPN types)
MAX
0.5
5.0
1.0
2.0
2.0
3.0
4.0
2.8
18K
500
300
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (18-September 2012)