2N6034 Datasheet, PDF (1/2 Pages) STMicroelectronics – MIDIUM POWER DAR;OMGTONS

2N6034 2N6035 2N6036 PNP
2N6037 2N6038 2N6039 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
2N6034 2N6035 2N6036
2N6037 2N6038 2N6039
40
60
80
40
60
80
5.0
4.0
8.0
100
40
1.5
-65 to +150
83.3
3.12
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=125°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6034, 2N6037)
40
BVCEO
IC=100mA (2N6035, 2N6038)
60
BVCEO
IC=100mA (2N6036, 2N6039)
80
VCE(SAT) IC=2.0A, IB=8.0mA
VCE(SAT) IC=4.0A, IB=40mA
VBE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=2.0A
hFE
VCE=3.0V, IC=500mA
500
hFE
VCE=3.0V, IC=2.0A
750
hFE
VCE=3.0V, IC=4.0A
100
fT
VCE=10V, IC=750mA, f=1.0MHz
25
Cob
VCB=10V, IE=0, f=100kHz (PNP)
Cob
VCB=10V, IE=0, f=100kHz (NPN)
MAX
500
100
500
100
2.0
2.0
3.0
4.0
2.8
15K
200
100
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (12-March 2014)