2N6031 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

2N6031
PNP SILICON
POWER TRANSISTOR
140 VOLTS, 200 WATTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6031 is
a 16 Ampere PNP Silicon Power Transistor
designed for use in high power amplifiers and
high voltage switching regulator circuits.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JC
140
140
7.0
16
20
5.0
200
-65 to +200
0.875
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=140V
ICEX
VCE=140V, VEB(off)=1.5V
ICEX
VCE=140V, VEB(off)=1.5V, TC=150°C
ICEO
VCE=70V
IEBO
VEB=7.0V
BVCEO
IC=200mA
140
VCE(SAT)
IC=10A, IB=1.0A
VCE(SAT)
IC=16A, IB=4.0A
VBE(SAT)
IC=10A, IB=1.0A
VBE(ON)
VCE=2.0V, IC=8.0A
hFE
VCE=2.0V, IC=8.0A
15
hFE
VCE=2.0V, IC=16A
4.0
fT
VCE=20V, IC=1.0A, f=500kHz
1.0
Cob
VCB=10V, IE=0, f=100kHz
hfe
VCE=10V, IC=4.0A, f=1.0kHz
15
MAX
2.0
2.0
7.0
2.0
5.0
1.0
2.0
1.8
1.5
60
1000
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
R0 (27-August 2009)