2N5954_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and
2N6372 SERIES types are complementary Silicon
Power Transistors manufactured by the epitaxial base
process, mounted in a hermetically sealed metal case
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEV
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JC
2N5954
2N6372
90
90
85
80
2N5955
2N6373
70
70
65
60
5.0
6.0
2.0
40
-65 to +200
4.3
2N5956
2N6374
50
50
45
40
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5954
2N5955
2N6372
2N6373
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω
- 100 - -
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω
--
- 100
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω
--
--
ICEV
VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C - 2.0
--
ICEV
VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C - -
- 2.0
ICEV
VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C - -
--
ICER
VCE=75V
- 100 - -
ICER
VCE=55V
--
- 100
ICER
VCE=35V
--
--
ICEO
VCE=65V
- 1.0
--
ICEO
VCE=45V
--
- 1.0
ICEO
VCE=25V
--
--
IEBO
VBE=5.0V
- 0.1
- 0.1
BVCEV
IC=100mA, VBE=1.5V, RBE=100Ω
90 -
70 -
BVCER
IC=100mA, RBE=100Ω
85 -
65 -
BVCEO IC=100mA
80 -
60 -
2N5956
2N6374
MIN MAX
--
--
- 100
--
--
- 2.0
--
--
- 100
--
--
- 1.0
- 0.1
50 -
45 -
40 -
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
μA
mA
mA
mA
μA
μA
μA
mA
mA
mA
mA
V
V
V
R1 (24-November 2010)